ESJA54-08 Datasheet, PDF (1/2 Pages) American Microsemiconductor – High Voltage Silicon Diode ESJA SERIES

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC2690
DESCRIPTION
·High voltage and high fT
·Complementary to 2SA1220 PNP transistor
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·The 2SC2690 is general purpose transistors designed
For use in audio and radio frequency power amplifiers.
·Suitable for use in driver stage of 50 to 100W audio
Amplifiers and output stage of TV vertical deflection
circuit
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
120
V
VCER
Collector-Emitter Voltage RBE=150Ω
120
V
VCEO Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ Tc=25℃
TJ
Junction Temperature
1.2
A
20
W
-55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.com
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