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| DT430 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
DT430
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA ;IB=0
V(BR)CBO Collector-Base Breakdown Voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-Base Breakdown Voltage
IE=50mA ;IC=0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC=1A; IB=10mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC=6A; IB=50mA
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
hFE-2
DC Current Gain
IC= 4A; VCE= 4V
IC= 5mA; VCE= 4V
MIN TYP. MAX UNIT
300
V
400
V
7
V
1.5
V
3.0
V
100 μA
100 μA
2000
300
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