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| DT430 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
DT430
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
·High DC Current Gain
: hFE= 2000(Min.)@ IC= 4A
·Low Collector Saturation Voltage
: VCE(sat)= 3.0V(Max.)@ IC= 6A
APPLICATIONS
·Switching for dynamotor excitation
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
1
A
100
W
150
â
-55~150
â
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