D209L Datasheet, PDF (2/2 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
D209L
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC=0
hFE1
DC Current Gain
IC=5A ; VCE= 5V
hFE2
DC Current Gain
IC=8A ; VCE= 5V
VCE_(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE_(sat) Base-Emitter Saturation Voltage
IC= 8A; IB= 1.6A
fT
Current Gain Bandwidth Product
VCE=10V,IC=100mA,f=1MHZ
Switching times
t_s
Storage Time
t_f
Fall Time
IC= 8A , IB1= -IB2= 1.6A
MIN TYP. MAX UNIT
400
V
700
V
0.01 mA
8
40
6
30
1.0 V
1.2 V
5
MHZ
3.0 μs
0.7 μs
isc website：www.iscsemi.cn
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