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| D209L Datasheet, PDF (1/2 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High Switching Speed
·High Reliability
isc Product Specification
D209L
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
700
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base voltage
9
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
12
A
100
W
150
â
Tstg
Storage Temperature Range
-55~150 â
isc websiteï¼www.iscsemi.cn
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