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| BUZ10 Datasheet, PDF (2/2 Pages) STMicroelectronics – N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
BUZ10
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 14A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 50V; VGS= 0
VSD
Diode Forward Voltage
IF= 46A; VGS= 0
MIN MAX UNIT
50
V
2.1
4
V
0.07
Ω
±100 nA
1
uA
1.9
V
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