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| BUZ10 Datasheet, PDF (1/2 Pages) STMicroelectronics – N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUZ10
DESCRIPTION
·Typical RDS(on) = 0.06Ω
·High current capability
·175â operating temperature
APPLICATIONS
·High current , high speed switching
·Solenoid and relay drivers
·DC-DC & DC-AC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
50
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37â
23
A
Total Dissipation@TC=25â
75
W
Max. Operating Junction Temperature
175
â
Storage Temperature Range
-65~175 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
2.0 â/W
Rth j-a
Thermal Resistance,Junction to Ambient
62.5 â/W
isc websiteï¼www.iscsemi.cn
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