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| BUX99 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX99
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ; IB= 0; L= 25mH
300
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.2A; IB= 20mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 0.2A; IB= 20mA
ICES
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 400V;VBE= 0
VCE= 730V;VBE= -1.5V
VCE= 730V;VBE= -1.5V;TJ=100â
VEB= 12V; IC= 0
2
V
1
V
5
μA
50
250
μA
1
mA
hFE-1
DC Current Gain
IC= 10mA ; VCE= 2V
10
hFE-2
DC Current Gain
IC= 50mA ; VCE= 5V
fT
Current-GainâBandwidth Product IC= 0.1A ; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V,ftest= 1MHz
Switching times
16
42
4
MHz
12
pF
tstg
Storage Time
tf
Fall Time
IC= 1A ,VCC= 250V,
IB1= 20mA; IB2= -40mA
2
μs
0.8 μs
isc Websiteï¼www.iscsemi.cn
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