BUX99 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector Current-I_C= 1.5A
·High Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 300V(Min)
·High Switching Speed
APPLICATIONS
·Designed for use in fast switching applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
V_CES
Collector-Emitter Voltage
V_BE= 0
730
V_CEO
Collector-Emitter Voltage
300
UNIT
V
V
V_EBO
Emitter-Base Voltage
12
V
I_C
Collector Current-Continuous
1.5
A
I_CM
Collector Current-Peak
3
A
I_BB
Base Current-Continuous
0.75
A
I_BM
Base Current-Peak
1.5
A
I_E
Emitter Current-Continuous
2.25
A
I_EM
Emitter Current-Peak
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
4.5
A
28
W
150
℃
T_stg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
4.5 ℃/W
Thermal Resistance,Junction to Ambient 100 ℃/W
isc Product Specification
BUX99
isc Website：www.iscsemi.cn