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| BUX47 Datasheet, PDF (2/3 Pages) STMicroelectronics – HIGH VOLTAGE POWER SWITCH | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0;L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=50mA; IC=0;
VCEsat-1 Collector-emitter saturation voltage IC=6A;IB=1.2 A
VCEsat-2 Collector-emitter saturation voltage IC=9A;IB=3 A
VBEsat Base-emitter saturation voltage
ICEV
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
Switching times
IC=6A;IB=1.2 A
VCE=850V;VBE=-2.5V
TC=125â
VEB=5V;IC=0
IC=1A ;VCE=5V
Ton
Turn-on time
ts
Storage time
tf
Fall time
IC=6A;IB1=-IB2=1.2A;
VCC=150V
Product Specification
BUX47
MIN TYP. MAX UNIT
400
V
7
30
V
1.5
V
3
V
1.6
V
0.15
1.5
mA
1
mA
15
50
0.8 μs
2.5 μs
0.8 μs
2
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