BUX47 Datasheet, PDF (1/3 Pages) STMicroelectronics – HIGH VOLTAGE POWER SWITCH

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BUX47
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Intended for high voltage,fast
switching applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Bast current
I_BM
Bast current-peak
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
850
400
7
9
15
8
10
125
175
-65~175
UNIT
V
V
V
A
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance junction to case
MAX
1.2
UNIT
℃/W