BUV61 Datasheet, PDF (2/2 Pages) STMicroelectronics – HIGH POWER NPN SILICON TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV61
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
IC= 12.5A; IB= 0.625A
VCE_(sat)-1 Collector-Emitter Saturation Voltage _{IC= 12.5A; IB= 0.625A; Tj= 100℃}
IC=25A; IB= 2.5A
VCE _(sat)-2 Collector-Emitter Saturation Voltage _{IC=25A; IB= 2.5A; Tj= 100℃}
IC=40A; IB= 5A
VCE _(sat)-3 Collector-Emitter Saturation Voltage _{IC=40A; IB= 5A; Tj= 100℃}
VBE_(sat)-1 Base-Emitter Saturation Voltage
IC=25A; IB= 2.5A
IC=25A; IB= 2.5A; Tj= 100℃
VBE_(sat)-2 Base-Emitter Saturation Voltage
IC=40A; IB= 5A
IC=40A; IB= 5A; Tj= 100℃
ICER
Collector Cutoff Current
VCE= 300V; RBE= 10Ω
VCE= 300V; TC=100℃
ICEV
Collector Cutoff Current
VCE= 300V; VBE= -1.5V
VCE=300V;TC=100℃
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
MIN MAX UNIT
200
V
7
V
0.9
V
1.2
0.9
V
1.5
1.2
V
1.9
1.4
V
1.7
1.8
V
1.8
1
mA
5
1
mA
4
1.0 mA
isc website：www.iscsemi.cn
2