BUV61 Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH POWER NPN SILICON TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV61
DESCRIPTION
·High Current Capability
·Fully characterized at 125℃
·Fast switching speed
·Motor control
APPLICATIONS
·Intented for use in high frequency and efficiency
converters such us motor controllers and industrial
equipment.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage
(VBE= -1.5V)
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
IBM
Base Current-peak
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
300
V
200
V
7
V
50
A
75
A
8
A
15
A
250
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 0.7 ℃/W
isc website：www.iscsemi.cn
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