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| BUK456-800A Datasheet, PDF (2/2 Pages) NXP Semiconductors – PowerMOS transistor | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
BUK456-800A/B
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(TH)
RDS(ON)
IGSS
Gate Threshold Voltage
VDS= VGS; ID= 1mA
Drain-Source On-stage Resistance
VGS= 10V; BUK456-800A
ID= 1.5A BUK456-800B
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 800V;VGS= 0
VSD
Diode Forward Voltage
IF= 4A;VGS= 0
MIN MAX UNIT
800
V
2.1
4
V
3
Ω
4
±100 nA
20
uA
1.3
V
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