BUK456-800A Datasheet, PDF (1/2 Pages) NXP Semiconductors – PowerMOS transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUK456-800A/B
DESCRIPTION
·High speed switching
APPLICATIONS
·use in Switched Mode Power Supplies (SMPS),
motor control,welding, And in general purpose switching
resistance application
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
800
V
VGS
Gate-Source Voltage
Drain
BUK456-800A
ID
Current-continuou
s@ TC=37℃
BUK456-800B
Ptot
Total Dissipation@TC=25℃
±30
V
4
A
3.5
125
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case
R_{th j-a} Thermal Resistance,Junction to Ambient
1.0 ℃/W
60 ℃/W
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