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| BUK445-60A Datasheet, PDF (2/2 Pages) NXP Semiconductors – POWERMOS TRANSISTOR | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
BUK445-60A
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 20A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 60V; VGS= 0
VSD
Diode Forward Voltage
IF= 21A; VGS= 0
MIN MAX UNIT
60
V
2.1
4
V
0.038 Ω
±100 nA
1
uA
1.8
V
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