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| BUK445-60A Datasheet, PDF (1/2 Pages) NXP Semiconductors – POWERMOS TRANSISTOR | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUK445-60A
DESCRIPTION
·21A, 60V
⢠SOA is Power Dissipation Limited
⢠Nanosecond Switching Speeds
⢠Linear Transfer Characteristics
⢠Majority Carrier Device
⢠Related Literature
APPLICATIONS
·use in Switched Mode Power Supplies (SMPS),
motor control,welding, And in general purpose switching
resistance application
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
60
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=37â
21
A
Ptot
Total Dissipation@TC=25â
30
W
Tj
Max. Operating Junction Temperature
150
â
Tstg
Storage Temperature Range
150
â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
4.17 â/W
55 â/W
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