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| BUJ403A Datasheet, PDF (2/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUJ403A
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0, L= 25mH
550
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.4A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 2A; IB=B 0.4A
VCE=RatedVCES ;VBE= 0
VCE=RatedVCES ;VBE= 0;TC=125â
VCE= 550V; IB= 0
1.0
V
1.5
V
1
2
mA
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
0.1 mA
hFE-1
DC Current Gain
IC= 1mA ; VCE= 5V
13
hFE-2
DC Current Gain
IC= 0.5A ; VCE= 5V
20
47
hFE-3
DC Current Gain
IC= 2A ; VCE= 5V
13
25
hFE-4
DC Current Gain
IC= 3A ; VCE= 5V
15.5
Switching Times ;Resistive Load
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC= 2.5A; IB1= -IB2= 0.5A;
RL= 75Ω; VBB2= 4V
0.5 μs
3.0 μs
0.3 μs
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