BUJ403A Datasheet, PDF (1/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUJ403A
DESCRIPTION
·High Voltage
·High Speed Switching
APPLICATIONS
·Desined for use in high frequency electronic lighting ballast
applications, converters, inverters, switching regulators,
motor control systems, etc.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
1200
V
V_CEO
Collector-Emitter Voltage
550
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
6
A
I_CM
Collector Current-Peak
10
A
I_BB
Base Current
3
A
I_BM
Base Current-Peak
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
5
A
100
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Thermal Resistance,Junction to Case 1.25 ℃/W
isc Website：www.iscsemi.cn