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| BUH315D Datasheet, PDF (2/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUH315D
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB=B 1A
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
ICES
Collector Cutoff Current
hFE
DC Current Gain
VECF
C-E Diode Forward Voltage
VCE= 1500V;VBE= 0
IC= 3A ; VCE= 5V
IC= 3A ; VCE= 5V;TC=100â
IF= 3A
Switching Times; Resistive Load
ts
Storage Time
tf
Fall Time
IC= 3A;IB1= 1A; IB2= -1.5A
VCC= 400V
MIN TYP MAX UNIT
700
V
1.5
V
1.5
V
300 mA
0.2 mA
4
9
2.5
2.5
V
1.8 2.7 μs
0.2 0.3 μs
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