BUH315D Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUH315D
DESCRIPTION
·High Switching Speed
·High Voltage
·Built-in Integrated Diode
APPLICATIONS
·Designed for use in horizontal deflection circuits in TV’s
and monitors.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
1500
V
V_CEO Collector-Emitter Voltage
700
V
V_EBO Emitter-Base Voltage
10
V
I_C
Collector Current-Continuous
6
A
I_CM
Collector Current-Peak
12
A
I_BB
Base Current
3
A
I_BM
Base Current-Peak
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature
5
A
44
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case 2.8 ℃/W
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