 English |
|
|
|
|
|
|
|
| BUH313D Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUH313D
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH
600
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.75A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB=B 0.75A
IEBO
Emitter Cutoff Current
ICES
Collector Cutoff Current
hFE
DC Current Gain
VECF
C-E Diode Forward Voltage
VEB= 5V; IC=0
VCE= 1300V;VBE= 0
VCE= 1300V;VBE= 0;TC=125â
IC= 3A ; VCE= 5V
5
IC= 3A ; VCE= 5V;TC=100â
3
IF= 3A
1.5
V
1.3
V
300 mA
1.0
2.0
mA
2.5
V
Switching Times; Resistive Load
ts
Storage Time
tf
Fall Time
IC= 3A;IB1= 1A; IB2= 1.5A
VCC= 400V
1.8 2.7 μs
0.2 0.3 μs
isc Websiteï¼www.iscsemi.cn
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese