BUH313D Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUH313D
DESCRIPTION
·High Switching Speed
·High Voltage
·Built-in Integrated Diode
APPLICATIONS
·Horizontal deflection stage in standard and high resolution
Displays for TV’s and monitors.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
1300
V
V_CEO Collector-Emitter Voltage
600
V
V_EBO Emitter-Base Voltage
10
V
I_C
Collector Current-Continuous
5
A
I_CM
Collector Current-Peak
8
A
I_BB
Base Current
3
A
I_BM
Base Current-Peak
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature
5
A
50
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case 2.5 ℃/W
isc Website：www.iscsemi.cn