BUF420A Datasheet, PDF (2/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUF420A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH
450
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(_sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VCE(_sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A
VBE(_sat)-1 Base-Emitter Saturation Voltage
IC= 10A; IB= 1A
VBE(_sat)-2 Base-Emitter Saturation Voltage
ICER
Collector Cutoff Current
ICEV
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 20A; IB= 2A
VCE=1000V; RBE= 5Ω
VCE=1000V; RBE= 5Ω;TC=100℃
VCE=1000V; VBE= -1.5V
VCE=1000V; VBE= -1.5V;TC=100℃
VEB= 5V; IC= 0
0.8
V
0.5
V
0.9
V
1.1
V
0.2
mA
1.0
0.2
mA
1.0
1.0 mA
Switching Times; Resistive Load
t_s
Storage Time
t_f
Fall Time
IC= 10A; IB1= 0.5A; VCC= 50V;
1.0
μs
VBB= -5V, RBB= 0.6Ω; L= 0.25mH
V_clamp= 400V
0.05
μs
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