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BUF420A Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUF420A
DESCRIPTION
·High Voltage
·High Speed Switching
APPLICATIONS
·Designed for use in high-frequency power supplies and
motor control applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCEV Collector-Emitter Voltage VBE= -1.5V 1000
V
VCEO Collector-Emitter Voltage
450
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
30
A
ICM
Collector Current-Peak
60
A
IB
Base Current-Continuous
6
A
IBM
Base Current-peak
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
9
A
200
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 0.63 ℃/W
isc website:www.iscsemi.cn
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