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| BUF405AXI Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor BUF405AXI | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUF405AXI
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH
450
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB=B 1A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.25A
VBE(sat)-2 Base-Emitter Saturation Voltage
ICER
Collector Cutoff Current
ICEV
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 5A; IB=B 1A
VCE= VCEV; RBE= 5Ω
VCE= VCEV; RBE= 5Ω;TC=100â
VCE= VCEV; VBE= -1.5V
VCE= VCEV; VBE= -1.5V;TC=100â
VEB= 5V; IC= 0
0.8
V
0.5
V
0.9
V
1.1
V
0.1
0.5
mA
0.1
0.5
mA
1.0 mA
Switching Times
ts
Storage Time
tf
Fall Time
IC= 2.5A;IB1= 0.25A;VCC= 50V;
VBB= -5V, RBB= 2.4Ω;L= 1mH
Vclamp= 400V
0.8
μs
0.05
μs
isc Websiteï¼www.iscsemi.cn
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