BUF405AXI Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor BUF405AXI

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Voltage
·High Speed Switching
APPLICATIONS
·Designed for high reliability industrial and professional
power driving applications such as motor drivers and
off-line switching power supplies.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
V_CEV
Collector-Emitter Voltage
V_BE= -1.5V
1000
V_CEO Collector-Emitter Voltage
450
UNIT
V
V
V_EBO Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
7.5
A
I_CM
Collector Current-Peak
15
A
I_BB
Base Current-Continuous
3
A
I_BM
Base Current-peak
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
4.5
A
39
W
150
℃
T_stg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 3.2 ℃/W
isc Product Specification
BUF405AXI
isc Website：www.iscsemi.cn