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| BU999 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU999
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 2.5A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 10A; IB= 1A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 25A; IB= 2.5A
VBE(on) Base -Emitter On Voltage
IC= 10A; VCE= 2V
ICEX
Collector Cutoff Current
VCE= 140V; VBE= -1.5V
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
ICEO
Collector Cutoff Current
VCE= 70V; IB=B 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 2V
hFE-2
DC Current Gain
IC= 10A; VCE= 2V
hFE-3
DC Current Gain
IC= 25A; VCE= 2V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 10A, IB1= -IB2= 1A,
VCC= 80V
MIN TYP. MAX UNIT
140
V
0.8
V
1.5
V
1.8
V
2.5
V
1.8
V
10 μA
100 μA
50 μA
100 μA
35
25
100
12
0.3 μs
1.5 μs
0.25 μs
isc Websiteï¼www.iscsemi.cn
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