BU999 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU999
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 140V(Min)
·High Switching Speed
·High Power Dissipation
APPLICATIONS
·Designed for switching and linear applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
160
V
V_CEO
Collector-Emitter Voltage
140
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
25
A
I_CP
Collector Current-Pulse
40
A
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
10
A
106
W
200
℃
-55~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 2.08 ℃/W
isc Website：www.iscsemi.cn