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| BU941T Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU941T
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0;L= 10mH
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10 A; IB=B 250mA
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 12 A; IB=B 300mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 8 A; IB= 100mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 10 A; IB=B 250mA
VBE(sat)-3 Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 12 A; IB=B 300mA
VCE= 500V;VBE= 0
VCE= 500V;VBE= 0;Tj=125â
VCE= 450V;IB= 0
VCE= 450V;IB= 0;Tj= 125â
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 5A ; VCE= 10V
VECF
C-E Diode Forward Voltage
IF= 10A
MIN TYP MAX UNIT
400
V
1.6
V
1.8
V
2.0
V
2.2
V
2.5
V
2.7
V
0.1
0.5
mA
0.1
0.5
mA
20
mA
300
2.5
V
isc Websiteï¼www.iscsemi.cn
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