BU941T Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU941T
DESCRIPTION
·High Voltage
·DARLINGTON
APPLICATIONS
·High ruggedness electronic ignitions
·High voltage ignition coil driver
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
500
V
V_CEO
Collector-Emitter Voltage
400
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current- Continuous
15
A
I_CM
Collector Current-Peak
30
A
I_BB
Base Current
1
A
I_BM
Base Current-Peak
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
5
A
150
W
200
℃
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
R_{th j-c} Thermal Resistance, Junction to Case 1.2
UNIT
℃/W
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