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| BU931ZPFI Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU931ZPFI
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCL
Clamping Voltage
IC= 100mA; IB= 0
IC= 100mA; IB= 0; TJ=125â
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB=B 70mA
MIN TYP. MAX UNIT
350
350
500
500
V
1.6
V
V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA
1.8
V
V CE(sat)-3 Collector-Emitter Saturation Voltage IC= 10 A; IB=B 150mA
2
V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 8 A; IB= 100mA
2.2
V
V BE(sat)-2 Base-Emitter Saturation Voltage
IC= 10A; IB= 250mA
2.5
V
V BE(on)-1 Base-Emitter On Voltage
IC= 5A ; VCE= 2V
1.67
V
V BE(on)-2 Base-Emitter On Voltage
ICE(off) Collector Cutoff Current
IC= 10A ; VCE= 2V
VCC= 16V;VBE= 300mV;TJ= 125â
2
V
0.5 mA
ICL
Clamping Current
VCE= 350V;IB= 0
0.25 mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
50 mA
hFE
DC Current Gain
IC= 5A ; VCE= 2V
300
VECF C-E Diode Forward Voltage
IF= 10A
2.5
V
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