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| BU931ZPFI Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Voltage
·DARLINGTON
·Integrated High Voltage Zener
APPLICATIONS
·Application in high performance electronic car ignition
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCER
VCES
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
(RBE=100Ω)
Collector-Emitter Voltage
(VBE=0)
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
IBB
Base Current
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
350
V
350
V
350
V
350
V
5
V
20
A
5
A
60
W
150
â
-40~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case 2.08 â/W
isc Product Specification
BU931ZPFI
isc Websiteï¼www.iscsemi.cn
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