BU931R Datasheet, PDF (2/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU931R
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0; L= 10mH
400
V
VCE_(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 70mA
V CE_(sat)-2 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA
V CE_(sat)-3 Collector-Emitter Saturation Voltage IC= 10 A; IB= 250mA
VBE_(sat)-1 Base-Emitter Saturation Voltage
IC= 8 A; IB= 100mA
V BE_(sat)-2 Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 10A; IB= 250mA
VCE= 450V;VBE= 0
VCE= 450V;VBE= 0;Tj= 125℃
VCE= 400V;IB= 0
1.6
V
1.8
V
1.8
V
2.2
V
2.2
V
1.0
mA
5.0
1.0 mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
50 mA
hFE
DC Current Gain
IC= 5A; VCE= 10V
300
VECF C-E Diode Forward Voltage
IF= 10A
2.8
V
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