BU931R Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU931R
DESCRIPTION
·High Voltage
·DARLINGTON
APPLICATIONS
·High ruggedness electronic ignitions
·High voltage ignition coil driver
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
450
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current
15
A
ICM
Collector Current-peak
30
A
IB
Base Current
1
A
IBM
Base Current-peak
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
5
A
175
W
200
℃
Tstg
Storage Temperature Range
-40~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case 1.0 ℃/W
isc website：www.iscsemi.cn
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