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| BU926 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(8.0A,400V,120W) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU926
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0
400
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB=B 1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB=B 2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 1A
ICEX
Collector Cutoff Current
VCE= 850V; VBE= -2.5V
1.5
V
5.0
V
1.6
V
0.5 mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
1.0 mA
fT
Current-GainâBandwidth Product IC= 0.2A; VCE= 10V; ftest= 1MHz
Switching Times
4
MHz
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= 5A ;IB1= -IB2= 1A; VCC= 250V
1.0 μs
3.2 μs
0.8 μs
isc Websiteï¼www.iscsemi.cn
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