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| BU926 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(8.0A,400V,120W) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)
·Low Saturation Voltage
: VCE(sat)= 1.5V (Max)@IC= 5A
APPLICATIONS
·Designed for use in high-voltage , high-speed , power
switching in inductive circuit.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Base-Emitter Voltage
850
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current- Continuous
8
A
ICM
Collector Current-Peak
10
A
IBB
Base Current- Continuous
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
2
A
120
W
150
â
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case 1.04 â/W
isc Product Specification
BU926
isc Websiteï¼www.iscsemi.cn
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