 English |
|
|
|
|
|
|
|
| BU921 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU921
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0
400
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB=B 50mA
V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB=B 140mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 5A; IB=B 50mA
V BE(sat)-2 Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 7A; IB=B 140mA
VCE= 450V;VBE= 0
VCE= 450V;VBE= 0;Tj= 150â
VCE= 400V; IB= 0
1.8
V
1.8
V
2.2
V
2.5
V
0.25
0.5
mA
0.25 mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
50
mA
VECF
C-E Diode Forward Voltage
IF= 7A
2.5
V
isc Websiteï¼www.iscsemi.cn
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese