BU921 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU921
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 400V(Min)
APPLICATIONS
·Designed for automotive ignition applications and inverter
circuits for motor control.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CES
Collector-Emitter Voltage V_BE= 0
450
V
V_CEO
Collector-Emitter Voltage
400
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current
10
A
I_CM
Collector Current-peak
15
A
I_BB
Base Current
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
5
A
105
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case
1.2 ℃/W
isc Website：www.iscsemi.cn