BU910 Datasheet, PDF(2/2 Page) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

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BU910 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

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INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

BU910

ELECTRICAL CHARACTERISTICS

TC=25â unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 50mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.2A

VBE(sat)-1 Base-Emitter Saturation Voltage

IC= 2.5A; IB= 50mA

VBE(sat)-2 Base-Emitter Saturation Voltage

ICES

Collector Cutoff Current

ICEO

Collector Cutoff Current

IC= 4A; IB=B 0.2A

VCE= 400V; VBE= 0

VCE= 400V; VBE= 0,TC= 125â

VCE= 350V; IB= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

VECF

C-E Diode Forward Voltage

IF= 4A

MIN TYP. MAX UNIT

350

1.8 V

2.2 V

2.5 V

1 mA

5 mA

2.5 V

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