BU910 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BU910
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 350V(Min)
·High Switching Speed
APPLICATIONS
·Designed for applications such as electronic ignition, DC
and AC motor controls, solenoid drivers,etc.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
400
V
V_CEO
Collector-Emitter Voltage
350
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
6
A
I_CM
Collector Current-Peak
10
A
I_BB
Base Current
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
1
A
60
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
2.08 ℃/W
isc Website：www.iscsemi.cn