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| BU908 Datasheet, PDF (2/2 Pages) Micro Electronics – BU908 | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU908
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0
700
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
7
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.2A; IB= 0.8A
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 3.2A; IB= 0.8A
VCE= 1500V; VBE= 0
VCE= 1500V; VBE= 0; TC=125â
VEB= 5.0V; IC= 0
1.3
V
0.1
2.0
mA
0.1 mA
hFE
DC Current Gain
IC= 1.5A; VCE= 5V
8
fT
Current-GainâBandwidth Product
IC= 0.1A; VCE= 10V
7
MHz
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