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| BU908 Datasheet, PDF (1/2 Pages) Micro Electronics – BU908 | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU908
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min)
·High Power Dissipation-
: PD= 125W@TC= 25â
APPLICATIONS
·Designed for use in color TV horizontal deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector- Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current- Continuous
Collector Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
8
A
125
W
150
â
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case 1.0 â/W
isc Websiteï¼www.iscsemi.cn
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