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| BU807FI Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BU807FI
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 50mA
ICES
Collector Cutoff Current
VCE= 330V; VBE= 0
ICEV
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 330V; VBE(off)= 6V
VEB= 6V; IC= 0
VECF
C-E Diode Forward Voltage
IF= 4A
MIN TYP. MAX UNIT
150
V
1.5
V
2.4
V
0.1 mA
0.1 mA
3.0 mA
2.0
V
isc Websiteï¼www.iscsemi.cn
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