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| BU807FI Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BU807FI
DESCRIPTION
·High Voltage: VCBO= 330V(Min)
·Low Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 5A
APPLICATIONS
·Designed for use in horizontal deflection circuits in TVâs
and CRTâs.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
330
V
VCEV
Collector-Emitter Voltage
330
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
15
A
IBB
Base Current
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
2
A
30
W
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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