BU807 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – High Voltage: VCBO= 330V(Min)

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BU807
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0
VCE(_sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA
VBE(_sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 50mA
ICES
Collector Cutoff Current
VCE= 330V; VBE= 0
ICEV
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 330V; VBE(_off)= 6V
VEB= 6V; IC= 0
VECF C-E Diode Forward Voltage
IF= 4A
MIN TYP. MAX UNIT
150
V
1.5 V
2.4 V
0.1 mA
0.1 mA
3.0 mA
2.0 V
isc website：www.iscsemi.cn
2 _{isc & iscsemi is registered trademark}