BU807 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – High Voltage: VCBO= 330V(Min)

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BU807
DESCRIPTION
·High Voltage: V_CBO= 330V(Min)
·Low Saturation Voltage-
: V_CE(sat)= 1.5V(Max)@ I_C= 5A
APPLICATIONS
·Designed for use in horizontal deflection circuits in TV’s
and CRT’s.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
330
V
VCEV Collector-Emitter Voltage
330
V
VCEO Collector-Emitter Voltage
150
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
15
A
IB
Base Current
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
2
A
60
W
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
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