 English |
|
|
|
|
|
|
|
| BU806 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(8.0A,150-200V,60W) | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BU806
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 50mA
ICES
Collector Cutoff Current
VCE= RatedVCBO; VBE= 0
ICEV
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= RatedVCEV; VBE(off)= 6V
VEB= 6V; IC= 0
VECF
C-E Diode Forward Voltage
IF= 4A
Switching Times
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
IC= 5A; IB1= 50mA;IB2= -0.5A
VCC= 100V
MIN TYP. MAX UNIT
200
V
1.5 V
2.4 V
0.1 mA
0.1 mA
3.0 mA
2.0 V
0.35
μs
0.55
μs
0.20
μs
isc Websiteï¼www.iscsemi.cn
2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese