BU806 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(8.0A,150-200V,60W)

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BU806
DESCRIPTION
·High Voltage: V_CEV= 400V(Min)
·Low Saturation Voltage-
: V_CE(sat)= 1.5V(Max)@ I_C= 5A
APPLICATIONS
·Designed for use in horizontal deflection circuits in TV’s and
CRT’s.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
400
V
V_CEV
Collector-Emitter Voltage
400
V
V_CEO
Collector-Emitter Voltage
200
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
8
A
I_CM
Collector Current-Peak
15
A
I_BB
Base Current
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
2
A
60
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2.08 ℃/W
70 ℃/W
isc Website：www.iscsemi.cn