 English |
|
|
|
|
|
|
|
| BU705D Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU705D
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBO
L
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0;L= 25mH
MIN TYP. MAX UNIT
700
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA ; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.9A
5
V
VBE(sat) Base-Emitter Saturation Voltage
ICES Collector Cutoff Current
IEBO Emitter Cutoff Current
IC= 2A; IB=B 0.9A
VCE= VCESmax ; VBE= 0
VCE= VCESmax ; VBE= 0; TC=125â
VEB= 5V ; IC= 0
1.3
V
0.15
1
mA
1
mA
hFE
DC Current Gain
IC= 2A ; VCE= 5V
2.25
VECF C-E Diode Forward Voltage
IF= 3A
1.8
V
COB Output Capacitance
IE= 0; VCB= 10V; ftest= 0.1MHz
65
pF
fT
Current-GainâBandwidth Product IC= 0.1A; VCE= 5V; ftest= 5MHz
7
MHz
Switching Times
tstg
Storage Time
tf
Fall Time
IC= 2A ;IB(end)= 0.9A; LB= 25μH
10
μs
0.7
μs
isc Websiteï¼www.iscsemi.cn
2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese